Performance Analysis of the Designed 1330nm VCSEL Using InGaAsP/InP

Authors

  • Jennifar Aktar Department of Electrical and Electronic Engineering, American International University-Bangladesh Dhaka, Bangladesh
  • Prova Christina Gomes School of Electrical and Computer Engineering, University of Ottawa, Canada
  • Nabilah Manzoor Department of Electrical and Electronic Engineering, American International University-Bangladesh Dhaka, Bangladesh
  • Priyanka Paul Department of Electrical and Electronic Engineering, American International University-Bangladesh Dhaka, Bangladesh
  • Rinku Basak Department of Electrical and Electronic Engineering, American International University-Bangladesh Dhaka, Bangladesh

Keywords:

VCSEL, Material gain, Carrier density, Photon density, Relative response, Relative intensity, Injection current.

Abstract

This research addresses the design and performance analysis of a 1330nm InGaAsP/InP VCSEL based on a model that accurately describes a multiple quantum well separate confinement heterostructure VCSEL. MATLAB is used as the simulation tool. ‘Material gain vs. photon energy’, ‘Material gain vs. Wavelength’ and ‘Power vs. wavelength’ characteristics are obtained from simulations. Threshold current and output power of the laser is calculated using different parameters. Obtained results correspond to a maximum resonance frequency of 12.312 GHz at 28 mA injection current, -162.3 dB/Hz RIN and a value of 104 dB of the VCSEL at 7 mA injection current.

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Published

2017-04-21

How to Cite

Aktar, J., Gomes, P. C., Manzoor, N., Paul, P., & Basak, R. (2017). Performance Analysis of the Designed 1330nm VCSEL Using InGaAsP/InP. American Scientific Research Journal for Engineering, Technology, and Sciences, 30(1), 310–324. Retrieved from https://asrjetsjournal.org/index.php/American_Scientific_Journal/article/view/2857

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