Double Action p-n Junction Fabrication and Investigation for Solar cell and LED Application
Today, energy is fundamental agenda of the world. For electricity energy generation, price analysis factor is most crucial as cost of energy generation is increasing day by day throughout the world. This research describes some studies on low cost device with double action p-n junction. Thin films of ITO, n-type ZnS and Zn doped GaAs (1:2) are deposited on glass substrate by RF magnetron sputtering. Spectroscopic Ellipsometer is used for optical measurements of extracts. Under illumination (AM 1.5), device acts as solar cell with PCE of 2.4%. By applying reverse bias voltage radiative recombination also takes place in active region (Eg= 2.2ev) and device act as green color LED (with low band width) in wavelength range of 520-523nm. However, it is possible to improve emission capability and band width, by decreasing non-radiative recombination.
Fahrenbruch, A., & Bube, R. (2012). Fundamentals of solar cells: photovoltaic solar energy conversion. Elsevier.
Trykozko, R. (1997). Principles of photovoltaic conversion of solar energy. OPTOELECTRONICS REVIEW, 271-278.
Singh, S. C. BASICS OF LIGHT EMITTING DIODES, CHARACTERIZATIONS AND APPLICATIONS.
Wang, P., Li, X., Xu, Z., Wu, Z., Zhang, S., Xu, W., ... & Yu, Q. (2015). Tunable graphene/indium phosphide heterostructure solar cells. Nano Energy, 13, 509-517
Tseng, C. Y., Lee, C. T., Pchelyakov, O. P., & Preobrazhenskii, V. V. (2015). Performance improvement mechanisms of pyramid-like via hole recessed GaAs-based solar cells grown on Si wafer. Solar Energy, 118, 1-6
- There are currently no refbacks.