A Review on Semiconductors Including Applications and Temperature Effects in Semiconductors

Authors

  • Md. Atikur Rahman

Keywords:

Semiconductor, History of Semiconductor, Temperature effects in semiconductors, Applications of Semiconductors

Abstract

There is no doubt that semiconductors changed the world beyond anything that could have been imagined before them. Although people have probably always needed to communicate and process data, it is thanks to the semiconductors that these two important tasks have become easy and take up infinitely less time than, e.g., at the time of vacuum tubes. Semiconductor materials are the building blocks of the entire electronics and computer industry. Small, lightweight, high speed, and low power consumption devices would not be possible without integrated circuits (chips), which consist of semiconductor materials. This paper provides a general discussion of semiconductor materials, their history, classification and the temperature effects in semiconductors. In this section we provide details about the impact of temperature on the MOSFET energy band gap, carrier density, mobility, carrier diffusion, velocity saturation, current density, threshold voltage, leakage current and interconnect resistance. We also provide the applications of semiconductor materials in different sectors of modern electronics and communications. 

References

[1] B.G. Yacobi, Semiconductor Materials: An Introduction to Basic Principles, Springer 2003 ISBN 0306473615, pp. 1–3.
[2] Lidia ?ukasiak and Andrzej Jakubowski (January 2010). "History of Semiconductors". Journal of Telecommunication and Information Technology: 3.
[3] Peter Robin Morris (1990) A History of the World Semiconductor Industry, IET, ISBN 0863412270, pp. 11–25.
[4] Varshni YP (1967) Temperature dependence of the energy gap in semiconductors. Physica 34:149–154.
[5] Sze SM (1981) Physics of semiconductor devices, 2nd ed. John Wiley and Sons, NY.
[6] Chain K, Huang JH, Duster J, Ko PK, Hu C (1997) A MOSFET electron mobility model of wide temperature range (77–400K) for IC simulation. Semicond Sci Technol 12:355–358.
[7] Sabnis AG, Clemens JT (1979) Characterization of the electron mobility in the inverter Si surface. Int Electron Devices Mtg 18–21.
[8] Chen K, Wann HC, Dunster J, Ko PK, Hu C (1996) MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages. Solid-State Electronics 39:1515–1518.
[9] Jeon DS, Burk DE (1989) MOSFET electron inversion layer mobilities–a physically based semi-empirical model for a wide temperature range. IEEE Trans Electron Devices 36:1456–1463.
[10] Grabinski W, Bucher M, Sallese JM, Krummenacher F (2000) Compact modeling of ultra deep submicron CMOS devices. Int Conf on Signals and Electronic Systems 13–27.
[11] Fang FF, Fowler AB (1970) Hot electron effects and saturation velocities in Silicon inversion layers. J Appl Phys 41:1825–1831.
[12] Cheng Y et al (1997) Modelling temperature effects of quarter micrometer MOSFETs in BSIM3v3 for circuit simulation. Semicond Sci Technol 12:1349–1354.
[13] Pierret RF (1988) Semiconductor fundamentals, 2nd ed. Addison-Wesley, MA.
[14] Filanovsky IM, Allam A (2001) Mutual compensation of mobility and threshold voltage temperature effects with applications in CMOS circuits. IEEE Trans Circuits and Syst I: Fundamental Theory and Applications 48:876–884.
[15] Oxner ES (1988) FET technology and application. CRC Press, NY
[16] Agarwal A, Mukhopadhyay S, Raychowdhury A, Roy K, Kim CH (2006) Leakage power analysis and reduction for nanoscale circuits. IEEE Micro 26:68–80.
[17] Fallah F, Pedram M (2005) Standby and active leakage current control and minimization in CMOS VLSI systems. IEICE Trans Electronics E88-C:509–519
[18] Black JR (1969) Electromigration–a brief survey and some recent results. IEEE Trans Electron Devices 16:338–347.
[19] Amnon Yariv, Optical Electronics, 4 Edition, Saunders College Publishing, Philadelphia, (1991) p 565.
[20] P.G. Snyder, et al. “Modeling AlxGa1-xAs optical constants as functions of composition,” J. Appl. Phys. 68 11 (1990), 5925.
[21] B. Johs, J. Hale, J. Hilfiker, “Real-time process control with in situ spectroscopic ellipsometry,” III-Vs Review, 10 5 (1997) 40-42.
[22] M Schubert, et al. SPIE Proc., 4449-8 (2001).

Downloads

Published

2014-04-17

How to Cite

Atikur Rahman, M. (2014). A Review on Semiconductors Including Applications and Temperature Effects in Semiconductors. American Scientific Research Journal for Engineering, Technology, and Sciences, 7(1), 50–70. Retrieved from https://asrjetsjournal.org/index.php/American_Scientific_Journal/article/view/693